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D44H10 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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D44H10 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors D44H10 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA IB=0, 80 V VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=0.8A 1.5 V ICES Collector cut-off current VCE=80V; VBE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=2A ; VCE=1V 35 hFE-2 DC current gain IC=4A ; VCE=1V 20 fT Transition frequency IC=0.5A ; VCE=10V 50 MHz Ccb Collector capacitance f=1MHz ; VCB=10V 130 pF Switching times ton Turn-on time 0.3 μs ts Storage time 0.5 μs tf Fall time IC=5A IB1=- IB2=0.5A 0.14 μs |
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