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MJ6308 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ6308 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ6308 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 380 V V(BR)EBO Emitter-Collector Breakdown Voltage IE= 1.0mA; IC= 0 10 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=3A; IB= 0.4A 1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 1A B 1 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V ICES Collector Cutoff Current VCE=700V; VBE=0V VCE=700V; VBE=0V, Tc=100℃ 0.1 1.5 mA IEBO Emitter Cutoff current VEB=10V; IC= 0 10 μA hFE DC Current Gain IC= 8A; VCE=5V 5 20 Cob Output Capacitance VCE=10V; IE= 0; ftest=1.0KHz 100 pF isc Website:www.iscsemi.cn |
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