BAS16 datasheet(2/4 Pages) SIEMENS

Part #	BAS16

Description	Silicon Switching Diode (For high-speed switching)

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 4 page

Semiconductor Group

BAS 16

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Test circuit for reverse recovery time

Pulse generator:

tp = 100 ns, D = 0.05

Oscillograph:

R = 50

Ω

tr = 0.6 ns, Rj = 50

Ω

tr = 0.35 ns

≤ 1pF

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Breakdown voltage

I(BR) = 100

µA

V(BR)

–

µA

Reverse current

VR = 75 V

VR = 25 V, TA = 150 ˚C

VR = 75 V, TA = 150 ˚C

–

AC characteristics

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100

Ω

measured at IR = 1 mA

trr

––6

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

–

715

855

1000

1250

Diode capacitance

VR = 0 V, f = 1 MHz

––2

Forward recovery voltage

IF = 10 mA,

tp = 20 ns

Vfr

–

1.75

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