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PMD10K60 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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PMD10K60 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 24mA B 2.8 V VBE(on) Base-Emitter On Voltage IC= 6A; VCE= 3V 2.8 V ICER Collector Cutoff current VCE= 60V; RBE= 1KΩ VCE= 60V; RBE= 1KΩ, TC=150℃ 1.0 5.0 mA IEBO Emitter Cut-off current VEB= 5V; IC= 0 2.0 mA hFE DC Current Gain IC= 6A; VCE= 3V 1000 20000 fT Current-Gain—Bandwidth Product IC= 5A; VCE= 3V, f= 1kHz 4 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 300 pF isc Website:www.iscsemi.cn 2 |
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