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CSD87330Q3D Datasheet(PDF) 3 Page - Texas Instruments

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Part # CSD87330Q3D
Description  Synchronous Buck NexFET??Power Block
PDF  21 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

CSD87330Q3D Datasheet(HTML) 3 Page - Texas Instruments

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CSD87330Q3D
www.ti.com
SLPS284B
– AUGUST 2011 – REVISED SEPTEMBER 2011
ELECTRICAL CHARACTERISTICS
TA = 25°C (unless otherwise stated)
Q1 Control FET
Q2 Sync FET
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, IDS = 250µA
30
30
V
Drain to Source Leakage
IDSS
VGS = 0V, VDS = 20V
1
1
µA
Current
Gate to Source Leakage
IGSS
VDS = 0V, VGS = +10 / –8
100
100
nA
Current
Gate to Source Threshold
VGS(th)
VDS = VGS, IDS = 250µA
1
2.1
0.75
1.15
V
Voltage
VIN = 12V, VGS = 5V,
VOUT = 1.3V, IOUT = 15A,
ZDS(on)
Effective AC On-Impedance
9.45
3.6
m
Ω
fSW = 500kHz,
LOUT = 1µH
gfs
Transconductance
VDS = 15V, IDS = 15A
51
76
S
Dynamic Characteristics
CISS
Input Capacitance
750
900
1360
1632
pF
COSS
Output Capacitance
VGS = 0V, VDS = 15V,
310
370
580
700
pF
f = 1MHz
Reverse Transfer
CRSS
13
16
35
44
pF
Capacitance
RG
Series Gate Resistance
1.5
3
0.8
1.6
Ω
Qg
Gate Charge Total (4.5V)
4.8
5.8
9.6
11.5
nC
Qgd
Gate Charge - Gate to Drain
0.9
1.8
nC
VDS = 15V,
Gate Charge - Gate to
IDS = 15A
Qgs
1.5
2
nC
Source
Qg(th)
Gate Charge at Vth
0.9
1.1
nC
QOSS
Output Charge
VDS = 14V, VGS = 0V
6
11
nC
td(on)
Turn On Delay Time
4.5
4.5
ns
tr
Rise Time
6.8
7.5
ns
VDS = 15V, VGS = 4.5V,
IDS = 15A, RG = 2Ω
td(off)
Turn Off Delay Time
9.4
9.1
ns
tf
Fall Time
1.7
1.6
ns
Diode Characteristics
VSD
Diode Forward Voltage
IDS = 15A, VGS = 0V
0.85
1
0.85
1
V
Qrr
Reverse Recovery Charge
10
15
nC
VDS = 14V, IF = 15A,
di/dt = 300A/
µs
trr
Reverse Recovery Time
14
18
ns
Max RθJA = 73°C/W
Max RθJA = 135°C/W
when mounted on
when mounted on
1 inch2 (6.45 cm2) of
minimum pad area of
2-oz. (0.071-mm thick)
2-oz. (0.071-mm thick)
Cu.
Cu.
Copyright
© 2011, Texas Instruments Incorporated
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