BLF888A_BLF888AS

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 3 — 30 August 2011

2 of 17

NXP Semiconductors

BLF888A; BLF888AS

UHF power LDMOS transistor

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

BLF888A (SOT539A)

1drain1

2drain2

3gate1

4gate2

5source

[1]

BLF888AS (SOT539B)

1drain1

2drain2

3gate1

4gate2

5source

[1]

5

12

4

3

4

3

5

1

2

sym117

5

12

4

3

4

3

5

1

2

sym117

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLF888A

-

flanged balanced LDMOST ceramic package;

2 mounting holes; 4 leads

SOT539A

BLF888AS

-

earless flanged balanced LDMOST ceramic

package; 4 leads

SOT539B

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

110

V

gate-source voltage

0.5

+11

V

storage temperature

65

+150

C

junction temperature

-

200

C