2SD2142 datasheet(1/1 Pages) HTSEMI

Part #	2SD2142

Description	TRANSISOR (NPN)

PDF	1 Pages

Scroll/Zoom	100%

Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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1 / 1 page

TRANSISOR (NPN)

FEATURES

 Darlington Connection for a High hFE

 High Input Impedance

MARKING: R1M

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

32

V

VEBO

Emitter-Base Voltage

12

V

IC

Collector Current

300

mA

PC

Collector Power Dissipation

200

mW

RΘJA

Thermal Resistance From Junction To Ambient

625

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100µA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA, IB=0

32

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

12

V

Collector cut-off current

ICBO

VCB=30V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=12V, IC=0

0.1

µA

DC current gain

hFE

VCE=3V, IC=100mA

5000

Collector-emitter saturation voltage

VCE(sat)

IC=200mA, IB=0.2mA

1.4

V

Transition frequency

fT

VCE=5V,IC=10mA, f=100MHz

200

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

2.5

pF

SOT–23

1. BASE

2. EMITTER

3. COLLECTOR

１　

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2SD2142

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