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MMBD248 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBD248 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente MMBD248/MMBD248A MMBD248C/MMBD248S Surface Mount Small Signal Switching Diode 20-Oct-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Fast switching speed For general purpose switching applications High conductance MARKING Part Name MMBD248 MMBD248A MMBD248C MMBD248S Marking 5H D6 D5 D4 Circuit ABSOLUTE MAXIMUM RATINGS (Single Diode @ Ta = 25°C) Parameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 200 mA Peak Forward Surge Current @ t = 1.0µs @ t = 1.0s IFSM 2.0 1.0 A Power Dissipation PD 350 mW Thermal Resistance Junction to Ambient RJA 357 ℃ / W Storage Temperature TSTG 150, -65 ~ 150 ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Parameters Symbol Min. Max. Unit Test Conditions V(BR)R1 100 - V IR = 100 µA Reverse Breakdown Voltage V(BR)R2 75 - V IR = 5 μA Forward Voltage VF - 1 V IF = 10 mA IR1 - 5 µA VR = 75 V Reverse Current IR2 - 25 nA VR = 25 V Capacitance between terminals CT - 4 pF VR = 0 V, f = 1.0 MHz Reverse Recovery Time tRR - 4 nS IF = IR = 10mA, VR = 6V, Irr = 0.1XIR, RL = 100Ω SOT-23 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.80 2.00 L 0.89 1.02 F 0.30 0.50 |
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