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SSF7400 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SSF7400
Description  30V , 1.7A , RDS(ON) 85m廓 N-Ch Enhancement Mode Power MOSFET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSF7400 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSF7400
30V , 1.7A , RDS(ON) 85mΩ
N-Ch Enhancement Mode Power MOSFET
25-Aug-2011 Rev. B
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
7400
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSF7400 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltage as low as 2.5V. It can be
used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters.
FEATURES
●
Lower Gate Charge
●
Small Package Outline
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-323
3K
7 inch
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
TA=25°C
1.7
Continuous Drain Current
3
TA=70°C
ID
1.3
A
Pulsed Drain Current
1,2
IDM
10
A
Power Dissipation
TA=25°C
PD
0.35
W
Linear Derating Factor
0.0028
W / °C
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
°C
Thermal Resistance Rating
Maximum Junction to Ambient
3
RJA
360
°C / W
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on FR4 board, t ≦10sec.
SOT-323
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.80
2.20
G
0.100 REF.
B
1.80
2.45
H
0.525 REF.
C
1.15
1.35
J
0.08
0.25
D
0.80
1.10
K
-
-
E
1.20
1.40
L
0.650 TYP.
F
0.20
0.40


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