SSG4407P datasheet(2/4 Pages) SECOS

2 / 4 page

SSG4407P

-15A, -30V, RDS(ON) 9 mΩ

Ω

P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

15-Jul-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

-1

VDS=VGS, ID= -250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS= ±25V

Zero Gate Voltage Drain Current

IDSS

-1

µA

VDS= -24V, VGS=0

-5

VDS= -24V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

-50

VDS= -5V, VGS= -10V

Drain-Source On-Resistance

RDS(ON)

VGS= -10V, ID= -13A

VGS= -4.5V, ID= -11A

VGS= -10V,ID= -13 A,TJ=55°C

Forward Transconductance

gfs

VDS= -5V, ID= -13A

Diode Forward Voltage

VSD

-0.7

IS=2.1A, VGS=0

Dynamic

Total Gate Charge

ID= -13A

VDS= -15V

VGS= -10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

14.5

Switching

Turn-On Delay Time

Td(on)

VDD= -15V

ID= -1A

VGEN= -10V

RL= 6

Rise Time

Turn-Off Delay Time

Td(off)

121

Fall Time

Notes:

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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