SSG4512CE datasheet(3/7 Pages) SECOS

Part #	SSG4512CE

Description	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m

PDF	7 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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3 / 7 page

SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ

Ω

P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ

Ω

Elektronische Bauelemente

26-Dec-2011 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

P-CHANNEL ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Gate Threshold Voltage

VGS(th)

-1

VDS=VGS, ID= -250µA

Gate-Source Leakage Current

IGSS

±100

VGS= -8V, VDS=0

Drain-Source Leakage Current

IDSS

-1

µA

VDS= -24V, VGS=0

On-State Drain Current

ID(ON)

-20

VDS= -5V, VGS= -10V

Static Drain-Source On-Resistance

RDS(ON)

VGS= -10V, ID= -5.2A

VGS= -4.5V, ID= -4.2A

Forward Transconductance

gfs

VDS= -15V, ID= -5.2A

Dynamic

Total Gate Charge

ID= -5.2A

VDS= -15V

VGS= -10V

Gate-Source Charge

Qgs

2.2

Gate-Drain (“Miller”) Change

Qgd

1.7

Turn-on Delay Time

Td(on)

VDD= -15V

VGS= -10V

ID= -1A

RGEN=6

Rise Time

2.8

Turn-off Delay Time

Td(off)

53.6

Fall Time

Notes:

1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing.

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