60CTQ035PBF datasheet(2/7 Pages) VISHAY

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VS-60CTQ...PbF Series, VS-60CTQ...-N3 Series

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Vishay Semiconductors

Revision: 29-Aug-11

Document Number: 94239

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Note

(1) Pulse width < 300 μs, duty cycle < 2 %

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

MAX.

UNITS

Maximum forward voltage drop

VFM (1)

30 A

TJ = 25 °C

0.51

0.56

60 A

0.66

0.72

30 A

TJ = 125 °C

0.48

0.53

60 A

0.68

0.75

Maximum instantaneous reverse current

IRM

TJ = 25 °C

Rated DC voltage

0.33

TJ = 125 °C

145

250

Maximum junction capacitance

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

2000

Typical series inductance

Measured from top of terminal to mounting plane

8.0

Maximum voltage rate of change

dV/dt

Rated VR

10 000

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction temperature range

- 65 to 150

°C

Maximum storage temperature range

TStg

- 65 to 175

Maximum thermal resistance,

junction to case per leg

RthJC

DC operation

1.2

°C/W

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

0.50

Approximate weight

0.07

oz.

Mounting torque

minimum

Non-lubricated threads

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style TO-220AB

60CTQ035

60CTQ040

60CTQ045

60CTQ035PBF Datasheet(PDF) 2 Page - Vishay Siliconix

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