6EWL06FN-M3 datasheet(1/8 Pages) VISHAY

Part #	6EWL06FN-M3

Description	Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 93502

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 31-Mar-11

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®

VS-6EWL06FN-M3

Vishay Semiconductors

New Product

FEATURES

• Ultrafast recovery time, extremely low VF and

soft recovery

• 175 °C maximum operating junction temperature

• For PFC DCM operation

• Low leakage current

• Compliant to RoHS Directive 2002/95/EC

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Halogen-free according to IEC 61249-2-21 definition

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS inverters or as freewheeling diodes.

Their extremely optimized stored charge and low recovery

current

minimize

the

switching

losses

and

reduce

over dissipation in the switching element and snubbers.

PRODUCT SUMMARY

Package

D-PAK (TO-252AA)

IF(AV)

6 A

VR

600 V

VF at IF

1.25 V

trr (typ.)

59 ns

TJ max.

175 °C

Diode variation

Single die

2, 4

3

Anode

1

N/C

D-PAK (TO-252AA)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

VRRM

600

V

Average rectified forward current

IF(AV)

TC = 156 °C

6

A

Non-repetitive peak surge current

IFSM

TJ = 25 °C

80

Peak repetitive forward current

IFM

TC = 156 °C, f = 20 kHz, d = 50 %

12

Operating junction and storage temperatures

TJ, TStg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

VBR,

VR

IR = 100 μA

600

-

V

Forward voltage

VF

IF = 6 A

-

0.99

1.25

IF = 6 A, TJ = 150 °C

-

0.87

1.05

Reverse leakage current

IR

VR = VR rated

-

5

μA

TJ = 150 °C, VR = VR rated

-

125

Junction capacitance

CT

VR = 600 V

-

3.5

-

pF

Series inductance

LS

Measured lead to lead 5 mm from package body

-

8

-

nH

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