BUP314S datasheet(2/7 Pages) SIEMENS

Part #	BUP314S

Description	IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated)

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

Logo

2 / 7 page

Semiconductor Group

Feb-07-1997

BUP 314S

Preliminary data

Maximum Ratings

Parameter

Symbol

Values

Unit

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

Thermal Resistance

Thermal resistance, chip case

RthJC

≤ 0.42

K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Collector-emitter breakdown voltage

VGE = 0 V, IC = 0.3 mA, Tj = 25 °C

V(BR)CES

1200

Gate threshold voltage

VGE = VCE, IC = 0.35 mA, Tj = 25 °C

VGE(th)

4.5

5.5

6.5

Collector-emitter saturation voltage

VGE = 15 V, IC = 15 A, Tj = 25 °C

VGE = 15 V, IC = 15 A, Tj = 125 °C

VGE = 15 V, IC = 30 A, Tj = 25 °C

VGE = 15 V, IC = 30 A, Tj = 125 °C

VCE(sat)

6.6

4.6

5.5

7.6

Zero gate voltage collector current

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

ICES

0.8

Gate-emitter leakage current

VGE = 25 V, VCE = 0 V

IGES

100

BUP314S Datasheet(PDF) 2 Page - Siemens Semiconductor Group

BUP314S Datasheet(HTML) 2 Page - Siemens Semiconductor Group

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL