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2SC3357 Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # 2SC3357
Description  NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
PDF  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC3357 Datasheet(HTML) 7 Page - Renesas Technology Corp

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Data Sheet PU10211EJ01V0DS
5
2SC3357
SMITH CHART
S21e-FREQUENCY
CONDITION : VCE = 10 V, IC = 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
3
6
9
12
15
S21e
f = 0.2 GHz
f = 2.0 GHz
S12e-FREQUENCY
CONDITION : VCE = 10 V, IC = 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
0.1
0.2
0.3
0.4 0.5
S12e
f = 0.2 GHz
f = 2.0 GHz
S11e, S22e-FREQUENCY
CONDITION : VCE = 10 V
60
50
70
80
90
100
110
120
130
0.18
0.16
0.14
0.12
0.10
0.08
0.17
0.15
0.13
0.11
0.09
0.07
0.32
0.34
0.36
0.38
0.40
0.42
0.33
0.35
0.37
0.39
0.41
0.43
REACTANCE COMPONENT
(
R
––––
ZO )
EN
T
0.3
0.2
0.1
0.4
50
10
6.0
4.0
3.0
20
0.2
0.4
0.6
0.8
1.0
0.2
0.8
0.6
0.4
f = 0.2 GHz
f = 0.2 GHz
f = 2.0 GHz
f = 20 GHz
S11e
S22e
: IC = 20 mA
: IC = 40 mA



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