Digital Transistors (Built-in Resistors)

DTC114EM/DTC114EE/DTC114EUA

DTC114EKA /DTC114ECA/DTC114ESA

·Equivalent Circuit

DIGITAL TRANSISTOR (NPN)

FEATURES



Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors(see equivalent circuit)



The bias resistors consist of thin-film resistors with complete isolation

to allow positive biasing of the input.They also have the advantage of

almost completely eliminating parasitic effects



Only the on/off conditions need to be set for operation, making device design easy

PIN CONNENCTIONS and MARKING

DTC114EM

SOT-723

1. IN

2. GND

3. OUT

MARKING:24

DTC114EE

SOT-523

1. IN

2. GND

3. OUT

MARKING:24

DTC114EUA

SOT-323

1. IN

2. GND

3. OUT

MARKING:24

DTC114EKA

SOT-23-3L

1. IN

2. GND

3. OUT

MARKING:24

DTC114ECA

SOT-23

1. IN

2. GND

3. OUT

MARKING:24

DTC114ESA

TO-92S

1. GND

2. OUT

3. IN



201

2-05

WILLAS ELECTRONIC CORP.

Features

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency.

High current capability, very low forward voltage drop.

High surge capability.

Guardring for overvoltage protection.

Very tiny plastic SMD package.

Ultra high-speed switching.

Silicon epitaxial planar chip, metal silicon junction.

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Mechanical data

Epoxy : UL94-V0 rated flame retardant

-L

Method 2026

•

Package outline

1.0A Surface Mount Schottky Barrier

Rectifiers - 20V-40V

SL12-N THRU SL14-N

A

PARAMETER

CONDITIONS

Forward rectified current

Forward surge current

Reverse current

Thermal resistance

Diode junction capacitance

Storage temperature

See Fig.2

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

f=1MHz and applied 4V DC reverse voltage

Symbol

MIN.

TYP.

MAX.

UNIT

I

O

I

FSM

I

R

R

θJA

C

J

T

STG

A

A

mA

pF

1.0

30

0.5

+175

-65

O

V

= V

T = 25 C

R

RRM

J

Junction to ambient

130

SL12-N

SL13-N

SL14-N

20

30

40

14

21

28

20

30

40

-55 to +100

SYMBOLS

V

RRM

(V)

V

RMS

V

R

(V)

(V)

*1

*2

*3

*1 Repetitive peak reverse voltage

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage@I =1.0A

F

V

F

(V)

*4

0.40

0.40

0.38

O

( C)

Operating

temperature

T ,

J

0.012(0.3) Typ.

0.016(0.4) Typ.

0.016(0.4) Typ.

0.106 (2.7)

0.091 (2.3)

0.057 (1.45)

0.041 (1.05)

0.047 (1.2)

0.031 (0.8)

Dimensions in inches and (millimeters)

SOD-323

-L

Low VF Chip Schottky Barrier Diodes

WILLAS ELECTRONIC CORP.

201 .1

Halogen free product for packing code suffix "H"

RoHS product for packing code suffix "G"

WILLAS