10N60L-TQ2-R datasheet(3/8 Pages) UTC

3 / 8 page

10N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-119.J

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD=300V, ID =10A,

RG =25Ω (Note 1, 2)

Turn-On Rise Time

150

Turn-Off Delay Time

tD(OFF)

144 300

Turn-Off Fall Time

165

Total Gate Charge

VDS=480V, ID=10A,

VGS=10 V (Note 1, 2)

Gate-Source Charge

QGS

6.7

Gate-Drain Charge

QGD

18.5

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS =10A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum

Pulsed

Drain-Source

Diode

Forward Current

ISM

Reverse Recovery Time

trr

VGS = 0 V, IS = 10A,

dIF / dt = 100 A/µs (Note 1)

420

Reverse Recovery Charge

QRR

4.2

µC

Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

2. Essentially independent of operating temperature

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