MMBTA06G-AE3-R datasheet(2/5 Pages) UTC

2 / 5 page

MMBTA06

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R206-041,D

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

VCBO

Collector Emitter Voltage

VCEO

Emitter Base Voltage

VEBO

Collector Current - Continuous

500

350

Total Device Dissipation(Note 2)

Derate Above 25°C

2.8

mW/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Device mounted on FR-4=1.6×1.6×0.06 in

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

θJA

357

°C/W

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Collector Emitter Breakdown Voltage (Note 1)

BVCEO

IC=1.0mA, IB=0

Emitter Base Breakdown Voltage

BVEBO

IE=100μA, IC=0

Collector Cutoff Current

ICES

VCE=60V, IB=0

0.1

μA

Collector Cutoff Current

ICBO

VCB=80V, IE=0

0.1

μA

ON CHARACTERISTICS

VCE=1V , IC=10mA,

100

DC Current Gain

hFE

VCE=1V , IC=100mA,

100

Collector Emitter Saturation Voltage

VCE(SAT) IC=100mA, IB=10mA

0.25

Base Emitter on Voltage

VBE(ON)

VCE=1V , IC=100mA,

1.2

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product (Note2)

VCE=2V, IC=10mA, f=100MHz 100

MHz

Note 1: Pulse test: PW≤300μs, Duty Cycle≤2%

2: fT is defined as the frequency at which IhfeI extrapolates to unity.

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