12N10G-TN3-R datasheet(2/5 Pages) UTC

2 / 5 page

12N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-737.a

ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (VGS=0)

VDSS

100

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

TC = 25°C

TC = 100°C

8.5

Pulsed (Note 2)

IDM

Power Dissipation

Derating Factor

0.2

W/°C

Avalanche Energy (Note 3)

EAS

100

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area

3. Starting TJ = 25°C, ID = 12A, VDD = 50V

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

100

°C/W

Junction to Case

θJC

°C/W

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

100

Drain-Source Leakage Current

IDSS

VDS=Max rating, VGS=0V

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100 nA

Reverse

VGS=-20V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=6A

0.15 0.18

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

430

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

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