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PZTA45L-AA3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # PZTA45L-AA3-R
Description  NPN HIGH VOLTAGE TRANSISTOR
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

PZTA45L-AA3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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PZTA44/45
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R207-003.C
ABSOLUTE MAXIMUM RATINGS (T
A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
PZTA44
VCBO
500
V
PZTA45
400
V
Collector-Emitter Voltage
PZTA44
VCEO
400
V
PZTA45
350
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Collector Dissipation
PC
1.2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
J =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown
Voltage
PZTA44
BVCBO
IC=100μA, IB=0
500
V
PZTA45
400
V
Collector-Emitter Breakdown
Voltage
PZTA44
BVCEO
IC=1mA, IB=0
400
V
PZTA45
350
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100μA, IC=0
6
V
Collector Cut-OFF Current
PZTA44
ICBO
VCB=400V, IE=0
0.1
μA
PZTA45
VCB=320V, IE=0
0.1
μA
Collector Cut-OFF Current
PZTA44
ICES
VCE=400V, IB=0
0.5
μA
PZTA45
VCE=320V, IB=0
0.5
μA
Emitter Cut-OFF Current
IEBO
VEB=4V, IC=0
0.1
μA
DC Current Gain (Note)
hFE
VCE=10V, IC=1mA
40
VCE=10V, IC=10mA
50
240
VCE=10V, IC=50mA
45
VCE=10V, IC=100mA
40
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=1mA, IB=0.1mA
0.4
V
IC=10mA, IB=1mA
0.5
V
IC=50mA, IB=5mA
0.75
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=10mA, IB=1mA
0.75
V
Current Gain Bandwidth Product
fT
VCE=20V,Ic=10mA, f=100MHz
50
MHz
Output Capacitance
COB
VCB=20V, IE=0, f=1MHz
7
pF
Note: Pulse test: Pulse Width<300
μs, Duty Cycle<2%



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