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60N06G-TQ2-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 60N06G-TQ2-R
Description  60A, 60V N-CHANNEL POWER MOSFET
PDF  8 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

60N06G-TQ2-R Datasheet(HTML) 2 Page - Unisonic Technologies

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60N06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-121.C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGS
±20
V
Continuous Drain Current
TC = 25°C
ID
60
A
TC = 100°C
39
A
Drain Current Pulsed (Note 2)
IDM
120
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
1000
mJ
Repetitive (Note 2)
EAR
180
mJ
Power Dissipation
(TC=25°C)
TO-220
PD
100
W
TO-220F
70.62
TO-263
54
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.61mH, IAS=60A, RG=20Ω, Starting TJ=25℃
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-220/TO-220F
θJA
62.5
°C/W
TO-263
110
Junction to Case
TO-220
θJC
1.25
°C/W
TO-220F
1.77
TO-263
2.31
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
60
V
Drain-Source Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
1
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 20V, VDS = 0 V
100
nA
Reverse
VGS = -20V, VDS = 0 V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 30A
14
18
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS = 0V, VDS =25V, f = 1MHz
2000
pF
Output Capacitance
COSS
400
pF
Reverse Transfer Capacitance
CRSS
115
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=30V, ID=60A, RL=0.5Ω,
VGS=10V (Note 2, 3)
12
30
ns
Rise Time
tR
11
30
ns
Turn-Off Delay Time
tD(OFF)
25
50
ns
Fall Time
tF
15
30
ns
Total Gate Charge
QG
VDS = 30V, VGS = 10 V
ID = 60A (Note 2, 3)
39
60
nC
Gate-Source Charge
QGS
12
nC
Gate-Drain Charge (Miller Charge)
QGD
10
nC



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