UF830

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-046,G

PARAMETER

SYMBOL

RATINGS

UNIT

500

V

500

V

Gate to Source Voltage

±30

V

Drain Current

Continuous

4.5

A

Pulsed

18

A

Power Dissipation

TO-220/TO-262/TO-263

73

W

TO-220F/ TO-220F1

38

W

TO-220F2

40

TO-251/TO-252

46

W

Single Pulse Avalanche Energy Rating (Note 2)

300

mJ

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1.

2.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-262/TO-263

62.5

°C/W

TO-220F/ TO-220F1

62.5

°C/W

TO-220F2

62.5

TO-251/TO-252

100.3

°C/W

Junction to Case

TO-220/TO-262/TO-263

1.71

°C/W

TO-220F/ TO-220F1

3.31

°C/W

TO-220F2

3.125

TO-251/TO-252

2.7

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Drain-Source Breakdown Voltage

500

V

Gate Threshold Voltage

2.0

4.0

V

On-State Drain Current (Note 1)

4.5

A

Drain-Source Leakage Current

25

μA

250

μA

Gate-Source Leakage Current

±100

nA

Static Drain-Source On-State Resistance

1.3

1.5

Ω

Forward Transconductance (Note 1)

2.5

4.2

S

Turn-On Delay Time

10

17

ns

Turn-On Rise Time

15

23

ns

Turn-Off Delay Time

33

53

ns

Turn-Off Fall Time

16

23

ns

Note: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.

2. MOSFET Switching Times are Essentially Independent of Operating Temperature.

3. Gate Charge is Essentially Independent of Operating Temperature.