UMBF170G-AE2-R datasheet(1/2 Pages) UTC

Part #	UMBF170G-AE2-R

Description	N-CHANNEL ENHANCEMENT MODE

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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1 / 2 page

UNISONIC TECHNOLOGIES CO., LTD

UMBF170

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-291.b

N-CHANNEL ENHANCEMENT

MODE

DESCRIPTION

The UMBF170 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.

FEATURES

* RDS(ON)<5Ω@VGS=10V

* RDS(ON)<5.3Ω@VGS=4.5V

* Low Reverse Transfer Capacitance ( CRSS = typical 7.5 pF )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

SYMBOL

2.Gate

1.Source

3.Drain

SOT-23-3

1

2

3

(JEDEC TO-236)

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

UMBF170G-AE2-R

SOT-23-3

S

G

D

Tape Reel

MARKING

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UMBF170G-AE2-R Datasheet(PDF) 1 Page - Unisonic Technologies

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