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UP1855G-X-AA3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UP1855G-X-AA3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() UP1855 PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw QW-R207-011.G ABSOLUATE MAXIUM RATINGS (T a = 25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -10 A Continuous Collector Current IC -4 A Power Dissipation (Ta = 25°C ) (Note 2) PD 3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum ELECTRICAL CHARACTERISTICS (T a= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC = -100µA -180 -210 V Collector-Emitter Breakdown Voltage BVCEO IC = -10mA -140 -170 V Emitter-Base Breakdown Voltage BVEBO IE = -100µA (Note) -6 -8 V VCB=-150V -50 nA Collector Cut-off Current ICBO VCB=-150V, Ta=100°C -1 µA Emitter Cut-off Current IEBO VEB=-6V -10 nA IC=-100mA, IB=-5mA (Note) -30 -60 mV IC=-500mA, IB=-50mA (Note) -70 -120 mV IC=-1A, IB=-100mA (Note) -110 -150 mV Collector-Emitter Saturation Voltage VCE (SAT) IC=-3A, IB=-300mA (Note) -275 -550 mV Base-Emitter Saturation Voltage VBE (SAT) IC=-3A, IB=-300mA (Note) -970 -1110 mV Base-Emitter Turn-On Voltage VBE (ON) VCE=-5V , IC=-3A (Note) -830 -950 mV hFE1 VCE=-5V , IC=-10mA (Note) 100 200 hFE2 VCE=-5V , IC=-1A (Note) 100 300 hFE3 VCE=-5V , IC=-3A (Note) 28 140 DC Current Gain hFE4 VCE=-5V , IC=-10A (Note) 10 Transition Frequency fT VCE=-10V , IC=-100mA, f=50MHz 110 MHz Output Capacitance Cob VCB=-20V, f=1MHz 40 pF tON VCC=-50V, IC=-1A 68 ns Switching Times tOFF IB1=-100mA, IB2=100mA 1030 ns Note: Pulse test: tP ≤300µs, Duty cycle ≤2% CLASSIFICATION OF hFE3 RANK A B RANGE 28~75 75(MIN.) |
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