DTA114YL-AN3-R datasheet(2/3 Pages) UTC

2 / 3 page

DTA114Y

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-073,G

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

Input Voltage

VIN

-40~+6

IOUT

-70

Output Current

IC(MAX)

-100

SOT-523

150

SOT-23/SOT-323

200

Power Dissipation

TO-92

625

Junction Temperature

+150

℃

Storage Temperature

TSTG

-55~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-23

302

°C/W

SOT-323

315

°C/W

SOT-523

318

°C/W

Junction to Ambient

TO-92

θJA

183

°C/W

SOT-23

145

°C/W

SOT-323

143

°C/W

SOT-523

130

°C/W

Junction to Case

TO-92

θJC

°C/W

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VIN(OFF)

VCC=-5V, IOUT=-100μA

-0.3

Input Voltage

VIN(ON)

VOUT=-0.3V, IOUT=-1mA

-1.4

Output Voltage

VOUT (ON) IOUT/IIN=-5mA/-0.25mA

-0.1

-0.3

Input Current

IIN

VIN=-5V

-0.88

Output Current

IOUT(OFF) VCC=-50V, VIN=0V

-0.5

μA

DC Current Gain

hFE

VOUT=-5V, IOUT=-5mA

Input Resistance

KΩ

Resistance Ratio

R2/R1

3.7

4.7

5.7

Transition Frequency

VCE=-10V, IE=5mA, f=100MHz(Note)

250

MHz

Note: Transition frequency of the device

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