| Electronic Components Datasheet Search |
|
UT50N03G-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT50N03G-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
|
2 / 6 page ![]() UT50N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-168.B ABSOLUTE MAXIMUM RATINGS (TJ = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 25 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 45 A Pulsed Drain Current (Note 3) IDM 180 A Single Pulsed Avalanche Energy (Note 4) EAS 20 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 19.5mH, IAS = 6.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 3) θJA 71.4 ℃ /W Junction to Case θJC 3.0 ℃ /W |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |