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UT136N03L-TA3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT136N03L-TA3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD UT136N03 Preliminary Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-459.a N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT136N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)= 30 V * ID=136 A * RDS(ON)= 4.5mΩ@VGS=10 V * RDS(ON) = 5.6mΩ@VGS=4.5 V SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UT136N03L-TA3-R UT136N03G-TA3-T TO-220 G D S Tube UT136N03L-TQ2-T UT136N03G-TQ2-T TO-263 G D S Tube UT136N03L-TQ2-R UT136N03G-TQ2-R TO-263 G D S Tape Reel |
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