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UT2955G-AA3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UT2955G-AA3-R
Description  SINGLE P-CHANNEL POWER MOSFET
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT2955G-AA3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UT2955
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-250.B
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
-1.7
A
Pulsed Drain Current
IDM
-10.4
A
Single Pulsed Avalanche Energy (Note 3)
EAS
225
mJ
SOT-223
1.0
Power Dissipation
TO-252
PD
1.13
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note:1.
2.
3.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
VDD=15V, VG=10V, IPK=6.7A, L=10mH, RG=25Ω
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-223
150
Junction to Ambient
TO-252
θJA
110
°C /W
SOT-223
14
Junction to Case
TO-252
θJC
4.53
°C /W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
-60
V
Drain-Source Leakage Current
IDSS
VDS=-60V, VGS=0V
-1.0
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-1.0mA
-2.0
-4.0
V
VGS=-10V, ID=-0.75A
145
170
VGS=-10V, ID=-1.5A
150
180
Static Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-2.4A
154
185
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
492
pF
Output Capacitance
COSS
165
pF
Reverse Transfer Capacitance
CRSS
VDS=-25V, VGS=0V, f=1MHz
50
pF
SWITCHING PARAMETERS
Total
14.3
Total Gate Charge
Threshold
QG
1.2
nC
Gate Source Charge
QGS
2.3
nC
Gate Drain Charge
QGD
VDS=30V, VGS=10 V, ID=1.5A
5.2
nC
Turn-ON Delay Time
tD(ON)
11
ns
Turn-ON Rise Time
tR
7.6
ns
Turn-OFF Delay Time
tD(OFF)
65
ns
Turn-OFF Fall-Time
tF
VGS=10V, VDD=25V, ID=1.5A,
RG=9.1Ω, RL=25Ω
38
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1.5A, VGS=0V
-1.10 -1.30
V
Body Diode Reverse Recovery Time
tRR
36
ns
Body Diode Reverse Recovery Charge
QRR
VGS=0V, dIS /dt=100A/µs
IS=1.5A
0.139
nC
Note: Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.



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