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UT4392-S08-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UT4392-S08-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UT4392 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-312.A ABSOLUTE MAXIMUM RATINGS (Ta =25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 12.5 A Pulsed Drain Current IDM 50 A Power Dissipation(Ta =25°C) PD 3.0 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient (PCB mounted) θJA 50 °C/W Junction to Case θJC 25 °C/W Notes: 1. Pulse width limited by the Maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250 µA 30 V Drain-Source Leakage Current IDSS VDS =24 V, VGS =0 V 1.0 µA Gate-Source Leakage Current IGSS VGS = ±20 V, VDS=0 V ±100 nA ON CHARACTERISTICS Gate-Threshold Voltage VGS(TH) VDS =VGS, IDS =250 µA 1 1.8 3 V On State Drain Current (Note 1) ID(ON) VDS ≥ 5V, VGS = 10V 30 A VGS =10 V, ID =12.5 A 9 11.5 mΩ Static Drain-Source On-Resistance(Note 1) RDS(ON) VGS =4.5 V, ID =10 A 13 16.5 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 2134 pF Output Capacitance COSS 343 pF Reverse Transfer Capacitance CRSS VDS =15 V, VGS =0 V, f=1.0MHz, (Note 2) 134 pF SWITCHING PARAMETERS Total Gate Charge QG 26 nC Gate Source Charge QGS 6 nC Gate Drain Charge QGD VDS =15V, VGS =10 V, ID =12.5A, (Note 2) 5 nC Turn-ON Delay Time tD(ON) 17 ns Turn-ON Rise Time tR 3.5 ns Turn-OFF Delay Time tD(OFF) 40 ns Turn-OFF Fall-Time tF VDD=15V,ID=1 A,VGEN=10 V RG=6 Ω, RL=15 Ω, (Note 3) 6 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS =2.7 A, VGS =0V 0.85 1.3 V Maximum Body-Diode Continuous Current IS (Note 4,5) 2.7 A Notes: 1. Pulse Test: PW ≤300μS, Duty Cycle ≤2% 2. For DESIGN AID ONLY, not subject to production testing. 3. Switching time is essentially independent of operating temperature. 4. Pulse width limited by the Maximum junction temperature. 5. Surface Mounted on FR4 Board, t ≤ 10 sec. |
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