UT9564

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-390.c

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-40

V

Gate-Source Voltage

±25

V

-7.3

A

Continuous Drain Current (Note 2)

-5.9

A

Pulsed Drain Current (Note 1)

-30

A

TO-252

2

SOP-8

2.5

W

Linear Derating Factor

0.02

W/°C

Junction Temperature

-55 ~150

°C

Storage Temperature

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-252

62.5

Junction to Ambient (Note 2)

SOP-8

50

°C/W

1. Pulse width limited by Max. junction temperature.

Note:

2 Surface mounted on 1 in

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-40

V

Breakdown Voltage Temperature Coefficient

BV

△

-0.03

V/°C

-1

Drain-Source Leakage Current

-25

µA

Gate- Source Leakage Current

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

28

Static Drain-Source On-State Resistance

(Note)

40

mΩ

Forward Transconductance

13

S

DYNAMIC PARAMETERS

Input Capacitance

2240 3600 pF

Output Capacitance

300

pF

Reverse Transfer Capacitance

f=1.0MHz

250

pF

SWITCHING PARAMETERS

Total Gate Charge (Note)

27

43

nC

Gate to Source Charge

6

nC

Gate to Drain Charge

14

nC

Turn-ON Delay Time (Note)

14

ns

Rise Time

8

ns

Turn-OFF Delay Time

46

ns

Fall-Time

17

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note)

-1.2

V

Reverse Recovery Time (Note)

37

ns

Reverse Recovery Charge

dI/dt=100A/µs

57

nC

Note: Pulse width ≤300µs, duty cycle ≤2%.