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UTD484-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UTD484-TN3-R
Description  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTD484-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UTD484
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-207.A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TC=25°C
ID
25
A
Pulsed Drain Current(Note 1)
IDM
80
A
Avalanche Current(Note 1)
IAR
15
A
Repetitive avalanche energy L=0.3mH(Note 1)
EAR
33
mJ
TC=25°C
50
Power Dissipation
TA=25°C
PD
2.1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
55
60
Junction-to-Case
θJC
2.3
3
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24V, VGS =0 V
1
µA
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
1.5
2.5
V
On State Drain Current
ID(ON)
VDS =5 V, VGS =10V
80
A
VGS =10 V, ID =20 A
12.1
15
Static Drain-Source On-Resistance
RDS(ON)
VGS =4.5 V, ID =15 A
18.5
23
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
938
1220
Output Capacitance
COSS
142
Reverse Transfer Capacitance
CRSS
VDS =15 V, VGS =0V, f=1MHz
99
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
17.5
21
Gate Source Charge
QGS
3
Gate Drain Charge
QGD
VDS =15V, VGS =10V, ID =20 A
4.1
nC
Turn-ON Delay Time
tD(ON)
5
Turn-ON Rise Time
tR
12
Turn-OFF Delay Time
tD(OFF)
19
Turn-OFF Fall-Time
tF
VGS=10V,VDS=15V,RL=0.75Ω,
RGEN =3Ω
6
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A,VGS=0V
0.71
1
V
Maximum Body-Diode Continuous
Current
IS
21
A
Body Diode Reverse Recovery Time
tRR
19
21
ns
Body Diode Reverse Recovery Charge
QRR
IF=20 A, dI/dt=100A/μs
10
12
nC



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