8T06AI-SW datasheet(6/7 Pages) NELLSEMI

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SEMICONDUCTOR

8T Series RoHS

RoHS

Fig.9 Relative variation of critical rate of decrease

of main current versus junction temperature.

Fig.10 DPAK and D PAK Thermal resistance junction

to ambient versus copper surface under tab

(printed circuit board Fr4, copper thickness:

35 µm.)

(dI/dt)c [T ] / (dI/dt)c [T specified]

T (°C)

100

Rth(j-a) (°C/W)

DPAK

D PAK

S(cm )

Case Style

100

125

2.87 (0.113)

2.62 (0.103)

9.40 (0.370)

9.14 (0.360)

10.54 (0.415) MAX.

16.13 (0.635)

15.87 (0.625)

4.06 (0.160)

3.56 (0.140)

1.45 (0.057)

1.14 (0.045)

2.67 (0.105)

2.41 (0.095)

2.65 (0.104)

2.45 (0.096)

5.20 (0.205)

4.95 (0.195)

0.90 (0.035)

0.70 (0.028)

3.91 (0.154)

3.74 (0.148)

4.70 (0.185)

4.44 0.1754

(

)

1.39 (0.055)

1.14 (0.045)

3.68 (0.145)

3.43 (0.135)

8.89 (0.350)

8.38 (0.330)

29.16 (1.148)

28.40 (1.118)

14.22 (0.560)

13.46 (0.530)

0.56 (0.022)

0.36 (0.014)

2.79 (0.110)

2.54 (0.100)

15.32 (0.603)

14.55 (0.573)

TO-220AB

TO-263(D PAK)

2.79 (0.110)

0.36 (0.014)

2.79 (0.110)

2.29 (0.090)

1.40 (0.055)

1.19 (0.047)

0 to 0.254 (0 to 0.01)

1.40 (0.055)

1.14 (0.045)

4.83 (0.190)

4.06 (0.160)

10.45 (0.411)

9.65 (0.380)

6.22 (0.245)

9.14 (0.360)

8.13 (0.320)

15.00 (0.591)

0.940 (0.037)

0.686 (0.027)

2.67 (0.105)

2.41 (0.095)

5.20 (0.205)

4.95 (0.195)

15.85 (0.624)

3.56 (0.140)

0.53 (0.021)

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