MMG3003NT1

1

RF Device Data

Freescale Semiconductor, Inc.

MMG3003NT1

40--3600 MHz, 20 dB

24 dBm

InGaP HBT

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

Broadband High Linearity Amplifier

The MMG3003NT1 is a general purpose amplifier that is internally input

matched and internally output prematched. It is designed for a broad range

of Class A, small--signal, high linearity, general purpose applications. It is

suitable for applications with frequencies from 40 to 3600 MHz such as

cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general

small--signal RF.

Features

• Frequency: 40--3600 MHz

• P1dB: 24 dBm @ 900 MHz

• Small--Signal Gain: 20 dB @ 900 MHz

• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz

• Single Voltage Supply

• Internally Matched to 50 Ohms

• Cost--effective SOT--89 Surface Mount Package

• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

1 2

3

CASE 1514--02, STYLE 1

SOT--89

PLASTIC

Characteristic

Symbol

900

MHz

2140

MHz

3500

MHz

Unit

Small--Signal Gain

(S21)

20

16.9

12

dB

Input Return Loss

(S11)

IRL

--15

--14.1 --11.2

dB

Output Return Loss

(S22)

ORL

--9.3

--14.5

--10.2

dB

Power Output @1dB

Compression

P1dB

24

23.3

20.5

dBm

Third Order Output

Intercept Point

OIP3

40.5

40

37

dBm

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

7

V

Supply Current

400

mA

RF Input Power

15

dBm

Storage Temperature Range

--65 to +150

°C

150

°C

2. For reliable operation, the junction temperature should not

exceed 150°C.

Table 3. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 109°C, 6.2 Vdc, 180 mA, no RF applied

31.6

°C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MMG3003NT1

Rev. 8, 2/2012

Freescale Semiconductor

Technical Data

© Freescale Semiconductor, Inc., 2004--2008, 2012. All rights reserved.