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33663 Datasheet(PDF) 11 Page - Freescale Semiconductor, Inc

Part # 33663
Description  LIN 2.1 / SAEJ2602-2 Dual LIN Physical Layer
PDF  37 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

33663 Datasheet(HTML) 11 Page - Freescale Semiconductor, Inc

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Analog Integrated Circuit Device Data
Freescale Semiconductor
11
33663
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
TXD1, TXD2 INPUT PINS (LOGIC)
Low Level Input Voltage
VIL
0.8
V
High Level Input Voltage
VIH
2.0
V
Input Threshold Voltage Hysteresis
VINHYST
100
300
600
mV
Pull-up Current Source
VEN = 5.0 V, 1.0 V < VTXD < 3.5 V
IPU
-60
-35
-20
A
EN1, EN2 INPUT PINS (LOGIC)
Low Level Input Voltage
VIL
0.8
V
High Level Input Voltage
VIH
2.0
V
Input Voltage Threshold Hysteresis
VINHYST
100
400
600
mV
Pull-down Resistor
RPD
100
230
350
kohm
LIN PHYSICAL LAYER - TRANSCEIVER LIN (LIN1, LIN2)(7)
Operating Voltage Range(8)
VBAT
8.0
18
V
Supply Voltage Range
VSUP
7.0
18
V
Voltage Range (within which the device is not destroyed)
VSUP_NON_OP
-0.3
40
V
Current Limitation for Driver Dominant State
Driver ON, VBUS = 18 V
IBUS_LIM
40
90
200
mA
Input Leakage Current at the Receiver
Driver off; VBUS = 0 V; VBAT = 12 V
IBUS_PAS_DOM
-1.0
mA
Leakage Output Current to GND
Driver Off; 8.0 V
VBAT 18 V; 8.0 V VBUS 18 V; VBUS VBAT;
VBUS VSUP
IBUS_PAS_REC
20
µA
Control Unit Disconnected from Ground(9)
GNDDEVICE = VSUP; VBAT = 12 V; 0 < VBUS < 18 V
IBUS_NO_GND
-1.0
1.0
mA
VBAT Disconnected; VSUP_DEVICE = GND; 0 V < VBUS < 18 V
(10)
IBUSNO_BAT
10
µA
Receiver Dominant State(11)
VBUSDOM
0.4
VSUP
Receiver Recessive State(12)
VBUSREC
0.6
VSUP
Notes
7.
Parameters guaranteed for 7.0 V
VSUP 18 V.
8.
Voltage range at the battery level, including the reverse battery diode.
9.
Loss of local ground must not affect communication in the residual network.
10.
Node has to sustain the current that can flow under this condition. The bus must remain operational under this condition.
11.
LIN threshold for a dominant state.
12.
LIN threshold for a recessive state.
Table 5. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V
 VSUP  18 V, -40 C  TA  125 C, GND = 0 V, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit



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