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BLP05M7200 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BLP05M7200 Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 9 page ![]() 1. Product profile 1.1 General description 200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz. 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for ISM operation (425 MHz to 450 MHz) Input integration for simple board design Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for CW applications in the 425 MHz to 450 MHz frequency range such as ISM and RF plasma lighting. BLP05M7200 Power LDMOS transistor Rev. 1 — 6 September 2012 Objective data sheet Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) CW 440 28 200 21 78 |
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Similar Description - BLP05M7200 |
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