MGSF3454VT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

012

34

0

4

8

12

20

VDS, DRAIN–TO–SOURCE VOLTAGE (V)

Figure 1. Output Characteristics

01

23

4

0

4

8

12

VGS, GATE–TO–SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

04

8

12

16

20

0

0.04

0.08

0.12

ID, DRAIN CURRENT (A)

Figure 3. On–Resistance vs. Drain Current

Figure 4. Capacitance

Figure 5. Gate Charge

TJ = –55°C

25

°C

125

°C

16

3 V

5 V

4 V

16

20

56

0.16

0.20

VGS = 4.5 V

–50

0.75

1.00

1.25

1.50

TJ, JUNCTION TEMPERATURE (°C)

–25

0

25

50

75

100

150

VGS = 10 V

ID = 4.2 A

1.75

125

VGS = 10, 9, 8, 7, 6V

VGS = 10 V

Figure 6. On–Resistance vs. Junction Temperature

612

18

VDS – DRAIN–TO–SOURCE VOLTAGE (V)

Ciss

Coss

Crss

24

30

0

Qg, TOTAL GATE CHARGE (nC)

1.5

3.0

4.5

6.0

9.0

VDS = 15 V

ID = 4.2 A

0

10

8

6

4

2

7.5

0

0

80

160

240

320

400

480

560