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STP9434 Datasheet(PDF) 3 Page - Stanson Technology

Part # STP9434
Description  STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
PDF  6 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP9434 Datasheet(HTML) 3 Page - Stanson Technology

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STP
STP
STP
STP9434
9434
9434
9434
P Channel Enhancement Mode MOSFET
-
7.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9434 2010. V1
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-20
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=-250uA
-0.35
-0.9
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=-20V,VGS=0V
-1
uA
VDS=-20V,VGS=0V
TJ=55℃
-10
On-State Drain
Current
ID(on)
VDS=-5V,VGS=-4.5V
-10
A
Drain-source On-
Resistance
RDS(on)
VGS=-4.5V,ID=-7.2A
VGS=-2.5V,ID=-5.2A
VGS=-1.8V,ID=-3.6A
30
40
50
40
52
62
mΩ
Forward
Transconductance
gfs
VDS=-5.0V,ID=-6.2A
14
S
Diode Forward Voltage
VSD
IS=-2.5A,VGS=0V
-0.8
-1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Qg
VDS=-10V,VGS=-5V
ID≡-6.4A
20
25
nC
Gate-Source Charge
Qgs
4.5
Gate-Drain Charge
Qgd
8.0
Input Capacitance
Ciss
VDS ==-10V,VGS=0V
f=1MHz
700
pF
Output Capacitance
Coss
160
Reverse
TransferCapacitance
Crss
120
Turn-On Time
td(on)
tr
VDD=-10V,RL=6Ω
ID=-1A,VGEN=-4.5V
RG=6Ω
20
30
nS
40
65
Turn-Off Time
td(off)
tf
90
120
70
90



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