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STP9527 Datasheet(PDF) 3 Page - Stanson Technology

Part # STP9527
Description  STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
PDF  7 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP9527 Datasheet(HTML) 3 Page - Stanson Technology

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STP9527
P Channel Enhancement Mode MOSFET
-10.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9527 2007. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-40
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250 uA
-0.8
-2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
VDS=-36V,VGS=0V
-1
Zero Gate Voltage Drain
Current
IDSS
VDS=-36V,VGS=0V
TJ=85℃
-10
uA
On-State Drain Current
ID(on)
VDS=-5V,VGS=4.5
-10
A
Drain-source On-Resistance
RDS(on)
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-8A
0.032
0.038
0.040
0.050
Ω
Forward Tran Conductance
gfs
VDS=-15V,ID=-5.7A
13
S
Diode Forward Voltage
VSD
IS=-2.3A,VGS=0V
-0.8
-1.2
V
Dynamic
Total Gate Charge
Qg
13
20
Gate-Source Charge
Qgs
4.5
Gate-Drain Charge
Qgd
VDS=-20V,VGS=-4.5
ID≡-5.0A
6.5
nC
Input Capacitance
Ciss
1100
Output Capacitance
Coss
145
Reverse TransferCapacitance
Crss
VDS =-20V,VGS=0V
f=1MHz
115
pF
40
80
Turn-On Time
td(on)
tr
55
100
30
60
Turn-Off Time
td(off)
tf
VDD=20V,RL=4Ω
ID=-5.0A,VGEN=-4.5
RG=1Ω
12
20
nS



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