ACE2304B datasheet(2/5 Pages) ACE

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ACE2304B

N-Channel Enhancement Mode MOSFET

VER 1.2

Ordering information

ACE2304B XX + H

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

Static

Drain-source breakdown

voltage

V(BR)DSS

VGS=0V, ID=250µA

Zero gate voltage drain

current

IDSS

VDS=24V, VGS=0V

µA

Gate threshold voltage

VGS(th)

VGS=VDS, IDS=250µA

1.4

Gate leakage current

IGSS

VGS=±20V, VDS=0V

100

Drain-source on-state

resistance

RDS(ON)

VGS=10V, ID=5.8A

31.5

mΩ

VGS=4.5V, ID=5A

mΩ

Forward transconductance

gFS

VDS=5V, ID=5A

Diode forward voltage

VSD

ISD=1A, VGS=0V

0.77

1.0

Maximum body-diode

continuous current

Switching

Total gate charge

VGS=10V, VDS=15V, ID=5A

7.6

9.9

Gate-source charge

Qgs

1.3

1.7

Gate-drain charge

Qgd

1.7

2.2

Turn-on delay time

td(on)

VGS=10V, VDD=15V, ID=1A

RL=15Ω, RG=6Ω

10.1 20.3

Turn-on rise time

3.2

6.3

Turn-off delay time

td(off)

22.2 44.4

Turn-off fall time

Dynamic

Input capacitance

Ciss

VGS=0V, VDS=15V,

f=1.0MHz

391

Output capacitance

Coss

86.2

Reverse transfer capacitance

Crss

59.4

Gate resistance

VGS=0V, VDS=0V, f=1MHz

1.4

BM : SOT-23-3L

Pb - free

Halogen - free

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