2N2221 datasheet(3/4 Pages) COMSET

3 / 4 page

NPN 2N2221 – 2N2221A

2N2222 – 2N2222A

16/10/2012

COMSET SEMICONDUCTORS

3 | 4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

VCE(SAT)

Collector-Emitter

saturation Voltage

(*)

IC=150 mA, IB=15 mA

2N2221-2N2222

0.4

2N2221A-2N2222A

0.3

IC=500 mA, IB=50 mA

2N2221-2N2222

1.6

2N2221A-2N2222A

VBE(SAT)

Base-Emitter

saturation Voltage

(*)

IC=150 mA, IB=15 mA

2N2221-2N2222

1.3

2N2221A-2N2222A

0.6

1.2

IC=500 mA, IB=50 mA

2N2221-2N2222

2.6

2N2221A-2N2222A

Transition

frequency

IC=20 mA, VCE=20 V

f= 100MHz

2N2221-2N22218A

2N2222

250

MHz

2N2222A

300

hfe

Small signal

current gain

IC=1 mA, VCE=10 V

f= 1kHz

2N2221A

150

2N2222A

300

IC=10 mA, VCE=10 V

f= 1kHz

2N2221A

300

2N2222A

375

Delay time

IC=150 mA, IB =15 mA

-VBB=0.5 V, VCC=30 V

2N2221A

2N2222A

Rise time

IC=150 mA, IB =15 mA

-VBB=0.5 V, VCC=30 V

2N2221A

2N2222A

Storage time

IC=150 mA, VCC=30 V

IB1 = -IB2 =15 mA

2N2221A

225

2N2222A

Fall time

IC=150 mA, VCC=30 V

IB1 = -IB2 =15 mA

2N2221A

2N2222A

rb,CC

Feedback time

constant

IC=20 mA, VCE=20 V

f= 31.8MHz

2N2221A

150

2N2212A

(*) Pulse conditions : tp < 300

µs, δ =2%

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