2SC4550 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN 2SC4550

08/10/2012

COMSET SEMICONDUCTORS

2 | 3

hFE CLASSIFICATION

Marking

Test Condition(s)

hFE2

IC = 1.5 A, VCE = 2 V

100 to 200

150 to 300

200 to 400

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO

Collector to Emitter Voltage IC = 4 A, IB = 0.4 A, L = 1 mH

VCEX

Collector to Emitter Voltage

IC = 4 A, IB1 = -IB2 = 0.4 A

VBE(OFF) = -1.5V, L = 180 µH

clamped

ICBO

Collector Cutoff Current

VCB = 60 V, IE = 0

µA

ICER

Collector Cutoff Current

VCE = 60 V, RBE = 50 Ω

Ta = 125°C

ICEX

Collector Cutoff Current

VCE = 60 V, VBE(OFF) = -1.5 V

µA

VCE = 60 V, VBE(OFF) = -1.5 V

Ta = 125°C

IEBO

Emitter Cutoff Current

VEB = 5.0 V, IC = 0

µA

hFE

DC Current Gain (*)

hFE1

IC = 0.7 A, VCE = 2 V

100

hFE2

IC = 1.5 A, VCE = 2 V

100

200

400

hFE3

IC = 4 A, VCE = 2 V

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC = 4 A, IB = 0.2 A

0.3

IC = 6 A, IB = 0.3 A

0.5

VBE(SAT)

Base-Emitter saturation

Voltage (*)

IC = 4 A, IB = 0.2 A

1.2

IC = 6 A, IB = 0.3 A

1.5

Cob

Collector capacitance

VCB = 10 V, IE = 0

f = 1.0MHz

100

Gain bandwidth product

IC = 1 A, VCE = 10 V

150

MHz

ton

Turn-on time

IC = 4 A, RL = 12.5 Ω

IB1 = -IB2 = 0.2 A, VCC = 50 V

Refer to the test circuit.

0.1

0.3

µs

tstg

Storage time

1.5

Fall time

0.1

0.3

(*) Pulse conditions : tp < 300

µs, δ =2%

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