BD240 datasheet(2/3 Pages) COMSET

2 / 3 page

PNP BD240 – A – B – C

22/10/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICEO

Collector Cutoff Current

VCE=-30 V

BD240

-0.3

VCE=-30 V

BD240A

VCE=-60 V

BD240B

VCE=-60 V

BD240C

IEBO

Emitter Cutoff Current

VBE=-5 V

BD240

-1.0

BD240A

BD240B

BD240C

ICES

Collector Cutoff Current

(VBE = 0)

VCE=-45 V

BD240

-0.2

VCE=-60 V

BD240A

VCE=-80 V

BD240B

VCE=-100 V

BD240C

VCEO(sus)

Collector-Emitter

Sustaining Voltage

(IB = 0) (*)

IC =-30mA

BD240

-45

BD240A

-60

BD240B

-80

BD240C

-100

hFE

DC Current Gain (*)

VCE=-4 V

IC=-0.2 A

BD240

BD240A

BD240B

BD240C

VCE=-4 V

IC=-1 A

BD240

BD240A

BD240B

BD240C

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC=-1 A

IB=-200 mA

BD240

0.6

BD240A

BD240B

BD240C

VBE(on)

Base-Emitter Voltage (*)

VCE=-4 V

IC=-1 A

BD240

1.3

BD240A

BD240B

BD240C

hfe

Small Signal Current Gain

VCE=10 V

IC=0.2 A

f = 1KHz

BD240

BD240A

BD240B

BD240C

VCE=-10 V

IC=-0.2 A

f = 1MHz

BD240

BD240A

BD240B

BD240C

Transistor frequency

VCE=-10 V, IC=-0.2 A, f = 1MHz

MHz

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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