BUZ73A datasheet(2/3 Pages) COMSET

2 / 3 page

BUZ73A

01/10/2012

COMSET SEMICONDUCTORS

2/3

SEMICONDUCTORS

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJC

Thermal Resistance, chip case

<3.1

°C/W

RthJA

Thermal Resistance, chip to ambient

<75

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VDSS

Drain-Source Breakdown

Voltage

ID=250 µA, VGS=0 V

200

VGS(th)

Gate-threshold Voltage

ID=1 mA, VGS= VDS

2.1

IDSS

Zero Gate Voltage Drain

Current

VDS=200 V, VGS=0 V

Tj=25 °C

0.1

µA

VDS=200 V, VGS=0 V

Tj=125 °C

100

IGSS

Gate-Source leakage Current

VGS=20 V, VDS=0 V

100

RDS(on)

Drain-Source on Resistance

ID=4.5 A, VGS=10 V

0.5

0.6

Ω

gfs

Transconductance

VDS >2 * ID * RDS(on)max

ID=4.5 A

4.2

CISS

Input Capacitance

VGS=0 V, VDS=25 V

f= 1MHz

400

530

COSS

Output Capacitance

130

CRSS

Reverse transfer Capacitance

td(on)

Turn-on Delay Time

VDD=30 V, VGS=10 V

ID=3 A

RGS= 50 Ω

Rise time

td(off)

Turn-off Delay Time

Fall Time

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