IRF640 datasheet(1/3 Pages) COMSET

Part #	IRF640

Description	N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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IRF640

1/3

09/11/2012

COMSET SEMICONDUCTORS

SEMICONDUCTORS

N CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

FEATURE

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VDS

Drain-Source Voltage

200

V

IDS

Continuous Drain Current TC= 37°C

18

A

IDM

Pulsed Drain Current TC= 25°C

72

IAR

Avalanche Current, Limited by Tjmax

18

EAS

Avalanche Energy, Single pulse

ID = 18 A, VDD = 50 V, Tj = 25°C

280

mJ

EAR

Avalanche Energy, Periodic Limited by Tjmax

13

VGS

Gate-Source Voltage

20

V

RDS(on)

Drain-Source on Resistance

0.18

Ω

PT

Power Dissipation at Case Temperature TC= 25°C

125

W

tJ

Operating Temperature

150

°C

tstg

Storage Temperature range

-55 to +150

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJC

Thermal Resistance, junction-case

1

°C/W

RthJA

Thermal Resistance, junction-ambient

62.5

N channel in a plastic TO220 package.

They are intended for use in high speed power switching, low

voltage, relay drivers and general purpose switching

applications.

DC-DC & DC-AC converters for telecom, industrial and lighting

equipment.

Compliance to RoHS.

Similar Part No. - IRF640

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	IRF640	95Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
STMicroelectronics	IRF640	107Kb / 9P	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET Oct-1999
Fairchild Semiconductor	IRF640	140Kb / 5P	N-Channel Power MOSFETs, 18A, 150-200V
	IRF640	132Kb / 7P	18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
	IRF640	916Kb / 10P	200V N-Channel MOSFET

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IRF640 Datasheet(PDF) 1 Page - Comset Semiconductor

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