MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (IBR = 100 µA)

V(BR)

30

—

V

Reverse Voltage Leakage Current (VR = 75 V)

IR

—

500

pA

Forward Voltage (IF = 1.0 mA)

VF

—

—

850

950

mV

Diode Capacitance (VR = 0 V, f = 1.0 MHz)

CD

—

2.0

pF

Reverse Recovery Time (IF = IR = 10 mA) (Figure 1)

trr

—

3.0

µs

Figure 1. Recovery Time Equivalent Test Circuit

Notes: 1. A 2.0 k

Ω variable resistor adjusted for a Forward Current (IF) of 10 mA.

+10 V

2 k

820

Ω

0.1

µF

DUT

VR

100

µH

0.1

µF

50

Ω OUTPUT

PULSE

GENERATOR

50

Ω INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

IF

INPUT SIGNAL