0

2

4

6

8

10

12

14

16

0

2

4

6

8

10

12

14

16

18

20

G001

0

2

4

6

8

10

0

5

10

15

20

25

30

G001

CSD18503KCS

www.ti.com

SLPS368 – SEPTEMBER 2012

40-V, N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD18503KCS

1

FEATURES

PRODUCT SUMMARY

2

•

Ultra Low Qg and Qgd

TYPICAL VALUE

UNIT

•

Low Thermal Resistance

Drain to Source Voltage

40

V

•

Avalanche Rated

Gate Charge Total (10V)

30

nC

Gate Charge Gate to Drain

4.6

nC

•

Logic Level

5.4

m

Ω

•

Pb Free Terminal Plating

Drain to Source On Resistance

3.6

m

Ω

•

RoHS Compliant

Threshold Voltage

1.9

V

•

Halogen Free

•

TO-220 Plastic Package

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

APPLICATIONS

TO-220 Plastic

CSD18503KCS

Tube

50

Tube

Package

•

DC-DC Conversion

•

Secondary Side Synchronous Rectifier

ABSOLUTE MAXIMUM RATINGS

•

Motor Control

VALUE

UNIT

Drain to Source Voltage

40

V

DESCRIPTION

Gate to Source Voltage

±20

V

The NexFET™ power MOSFET has been designed

Continuous Drain Current (Package limited),

100

to minimize losses in power conversion applications.

Continuous Drain Current (Silicon limited),

130

A

Continuous Drain Current (Silicon limited),

83

Pulsed Drain Current (1)

155

A

Power Dissipation

143

W

Operating Junction and Storage

–55 to 150

°C

Temperature Range

Avalanche Energy, single pulse

162

mJ

(1) Pulse duration

≤300μs, duty cycle ≤2%

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Copyright © 2012, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.