CSD18532KCS

SLPS361A – AUGUST 2012 – REVISED OCTOBER 2012

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain to Source Voltage

60

V

Drain to Source Leakage Current

1

μA

Gate to Source Leakage Current

100

nA

Gate to Source Threshold Voltage

1.5

1.8

2.2

V

4.2

5.3

m

Ω

Drain to Source On Resistance

3.3

4.2

m

Ω

Transconductance

187

S

Dynamic Characteristics

Input Capacitance

3900

4680

pF

Output Capacitance

470

564

pF

Reverse Transfer Capacitance

11

14

pF

Series Gate Resistance

1.3

2.6

Ω

Gate Charge Total (4.5V)

21

25

nC

Gate Charge Total (10V)

44

53

nC

Gate Charge Gate to Drain

6.9

nC

Gate Charge Gate to Source

10

nC

Gate Charge at Vth

7.3

nC

Output Charge

52

nC

Turn On Delay Time

7.8

ns

Rise Time

5.3

ns

Turn Off Delay Time

24.2

ns

Fall Time

5.6

ns

Diode Characteristics

Diode Forward Voltage

0.8

1

V

Reverse Recovery Charge

127

nC

di/dt = 300A/

μs

Reverse Recovery Time

57

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

Thermal Resistance Junction to Case

0.6

°C/W

Thermal Resistance Junction to Ambient

62

°C/W

2

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