MMDF2C02HD datasheet(6/12 Pages) MOTOROLA

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MMDF2C02HD

Motorola TMOS Power MOSFET Transistor Device Data

N–Channel

P–Channel

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)

400

600

800

1200

1000

VGS

VDS

Ciss

Coss

Crss

200

VDS = 0 V

VGS = 0 V

Ciss

Crss

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)

400

800

1000

1400

Figure 7. Capacitance Variation

1200

VGS

VDS

Crss

TJ = 25°C

Ciss

Coss

Crss

200

Ciss

600

VDS = 0 V

VGS = 0 V

Figure 7. Capacitance Variation

TJ = 25°C

RG, GATE RESISTANCE (OHMS)

100

1000

100

VDD = 10 V

ID = 2 A

VGS = 10 V

TJ = 25°C

td(off)

td(on)

QT, TOTAL GATE CHARGE (nC)

ID = 2 A

TJ = 25°C

VDS

VGS

Figure 8. Gate–To–Source and Drain–To–Source

Voltage versus Total Charge

RG, GATE RESISTANCE (OHMS)

100

VDD = 10 V

ID = 3 A

VGS = 10 V

TJ = 25°C

td(off)

td(on)

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

QT, TOTAL GATE CHARGE (nC)

ID = 3 A

TJ = 25°C

VDS

VGS

100

Figure 8. Gate–To–Source and Drain–To–Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

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