MMDF2N02E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V(BR)DSS

25

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc

VGS(th)

1.0

2.0

3.0

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 2.2 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

—

—

0.083

0.110

0.100

0.200

Ohm

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

1.0

2.6

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

380

532

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

235

329

Transfer Capacitance

f = 1.0 MHz)

Crss

—

55

110

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

—

7.0

21

ns

Rise Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

tr

—

17

30

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

—

27

48

Fall Time

G = 6.0 Ω)

tf

—

18

30

Turn–On Delay Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 9.1 Ω)

td(on)

—

10

30

Rise Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 9.1 Ω)

tr

—

35

70

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 9.1 Ω)

td(off)

—

19

38

Fall Time

G = 9.1 Ω)

tf

—

25

50

Gate Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

QT

—

10.6

30

nC

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q1

—

1.3

—

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q2

—

2.9

—

Q3

—

2.7

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

—

1.0

1.4

Vdc

Reverse Recovery Time

See Figure 11

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

34

66

ns

See Figure 11

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

17

—

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

17

—

Reverse Recovery Storage Charge

QRR

—

0.03

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.