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MM54HC366 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # MM54HC366
Description  Hex TRI-STATE Buffer, Inverting Hex TRI-STATE Buffer
PDF  8 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

MM54HC366 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes12)
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage (VCC)
b
05 to a70V
DC Input Voltage (VIN)
b
15 to VCCa15V
DC Output Voltage (VOUT)
b
05 to VCCa05V
Clamp Diode Current (IIK IOK)
g
20 mA
DC Output Current per pin (IOUT)
g
35 mA
DC VCC or GND Current per pin (ICC)
g
70 mA
Storage Temperature Range (TSTG)
b
65 Cto a150 C
Power Dissipation (PD)
(Note 3)
600 mW
SO Package only
500 mW
Lead Temp (TL) (Soldering 10 seconds)
260 C
Operating Conditions
Min
Max
Units
Supply Voltage VCC
V
DC Input or Output Voltage
VCC
V
VIN VOUT
Operating Temp Range (TA)
MMHC
b
a
C
MMHC
b
a
C
Input Rise or Fall Times
VCCe
V
tr tf
ns
VCCe
V
ns
VCCe
V
ns
DC Electrical Characteristics (Note 4)
TAe25 C
74HC
54HC
Symbol
Parameter
Conditions
VCC
TAeb40 to 85 CTAeb55 to 125 C Units
Typ
Guaranteed Limits
VIH
Minimum High Level Input
V
V
Voltage
V
V
V
V
VIL
Maximum Low Level Input
V
V
Voltage
V
V
V
V
VOH
Minimum High Level Output
VINeVIH or VIL
Voltage
lIOUTls mA
V
V
V
V
V
V
VINeVIH or VIL
lIOUTls
mA
V
V
lIOUTls
mA
V
V
VOL
Maximum Low Level Output
VINeVIH or VIL
Voltage
lIOUTls mA
V
V
V
V
V
V
VINeVIH or VIL
lIOUTls
mA
V
V
lIOUTls
mA
V
V
IIN
Maximum Input Current
VINeVCC or GND
V
g
g
g
m
A
IOZ
Maximum TRISTATE Output
VOUTeVCC or GND
V
g
g
g
m
A
Leakage Current
GeVIH
ICC
Maximum Quiescent Supply
VINeVCC or GND
V
m
A
Current
IOUTe mA
Note 1
Maximum Ratings are those values beyond which damage to the device may occur
Note 2
Unless otherwise specified all voltages are referenced to ground
Note 3
Power Dissipation temperature derating
plastic ‘‘N’’ package b12 mW C from 65 Cto85 C ceramic ‘‘J’’ package b12 mW C from 100 Cto125 C
Note 4
For a power supply of 5V g10% the worst case output voltages (VOH and VOL) occur for HC at 45V Thus the 45V values should be used when designing
with this supply Worst case VIH and VIL occur at VCCe55V and 45V respectively (The VIH value at 55V is 385V) The worst case leakage current (IIN ICC and
IOZ) occur for CMOS at the higher voltage and so the 60V values should be used
VIL limits are currently tested at 20% of VCC The above VIL specification (30% of VCC) will be implemented no later than Q1 CY’89
2



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